EMH2801 no. a1821-1/5 features ? composite type with a p-channel sillicon mosfet and a schottky barrier diode contained in one package facilitating high-density mounting ? [mosfet] ? low on-resistance ? 1.8v drive ? [sbd] ? small switching noise ? low forward voltage (i f =2.0a, v f max=0.46v) ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss --20 v gate-to-source voltage v gss 10 v drain current (dc) i d -- 3 a drain current (pulse) i dp pw 10 s, duty cycle 1% --20 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.0 w channel temperature tch 150 c storage temperature tstg --55 to +125 c continued on next page. package dimensions unit : mm (typ) 7045-007 ordering number : ena1821 81110pe tk im tc-00002458 sanyo semiconductors data sheet EMH2801 mosfet : p-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : anode 2 : no contact 3 : source 4 : gate 5 : drain 6 : drain 7 : cathode 8 : cathode sanyo : emh8 1 4 85 0.125 0. 2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 87 6 5 1234 tl qa lot no.
EMH2801 no. a1821-2/5 continued from preceding page. parameter symbol conditions ratings unit [sbd] repetitive peak reverse voltage v rrm 15 v nonrepetitive peak reverse surge voltage v rsm 15 v average output current i o rectangular wave 2.0 a surge forward current i fsm 50hz sine wave, 1 cycle 20 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.3 v forward transfer admittance | yfs | v ds =--10v, i d =--1.5a 3.6 s static drain-to-source on-state resistance r ds (on)1 i d =--1.5a, v gs =--4.5v 65 85 m r ds (on)2 i d =--1a, v gs =--2.5v 98 137 m r ds (on)3 i d =--0.5a, v gs =--1.8v 155 235 m input capacitance ciss v ds =--10v, f=1mhz 320 pf output capacitance coss v ds =--10v, f=1mhz 66 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 50 pf turn-on delay time t d (on) see speci ed test circuit. 7.1 ns rise time t r see speci ed test circuit. 21 ns turn-off delay time t d (off) see speci ed test circuit. 37 ns fall time t f see speci ed test circuit. 32 ns total gate charge qg v ds =--10v, v gs =--4.5v, i d =--3a 4.0 nc gate-to-source charge qgs v ds =--10v, v gs =--4.5v, i d =--3a 0.6 nc gate-to-drain ?miller? charge qgd v ds =--10v, v gs =--4.5v, i d =--3a 1.1 nc diode forward voltage v sd i s =--3a, v gs =0v --0.83 --1.2 v [sbd] reverse voltage v r i r =1ma 15 v forward voltage v f 1i f =1.0a 0.33 0.39 v v f 2i f =2.0a 0.39 0.46 v reverse current i r v r =7.5v 300 a interterminal capacitance c v r =10v, f=1mhz 35 pf switching time test circuit t rr test circuit (mosfet) (sbd) pw=10 s d.c. 1% p. g 50 g s d i d = --1.5a r l =6.67 v dd = --10v v out v in 0v --4.5v v in EMH2801 duty 10% 50 100 10 --5v t rr 100ma 100ma 10ma 10 s
EMH2801 no. a1821-3/5 i s -- v sd drain current, i d -- a diode forward voltage, v sd -- v sw time -- i d ciss, coss, crss -- v ds switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain-to-source voltage, v ds -- v r ds (on) -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c source current, i s -- a i d -- v ds i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v | y fs | -- i d forward transfer admittance, | y fs | -- s it14537 it14538 --0.3 --0.4 --0.5 --0.7 --0.6 --0.8 --0.9 --1.0 --1.1 0.1 1.0 7 5 3 2 10 7 5 3 2 --0.1 --1.0 23 57 --0.01 23 57 23 57 ta= - -25 c v ds = --10v --0.01 2 3 --0.1 7 5 v gs =0v --0.01 --0.1 23 57 2 --1.0 --10 357 2 v dd = --10v v gs = --4.5v t d (on) t d (off) t f it14539 0 --6 --10 7 5 7 5 3 2 100 3 2 --14 --20 --18 --2 --4 --8 --12 --16 ciss coss crss it14540 10 2 3 7 2 5 3 3 5 100 2 7 5 ta=75 c 25 c --25 c f=1mhz 0 --2 --4 --6 --8 -- 1 -- 3 -- 5 -- 7 30 60 120 90 150 180 240 210 0 40 20 80 60 160 140 120 100 200 180 240 220 0 it14535 it14536 i d = --0.5a --3a ta=25 c --1a 75 c 25 c 2 3 --1.0 2 7 5 3 7 5 --60 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --1.8v, i d = --0.5a v gs = --4.5v, i d = --3.0a v gs = --2.5v, i d = --1.0a 357 0 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 it14533 0 --1.0 --0.4 --0.6 --0.8 --0.2 --1.2 --1.8 --1.6 --1.4 --2.2 --2.0 0 --1.0 --0.5 --1.5 --2.0 --2.5 --3.0 --3.5 --5.0 --4.5 --4.0 -- 2 5 c it14534 --2.5v --1.5v --1.8v --8v --4.5v ta=75 c v ds = --10v --10v 25 c v gs = --1.2v --3.5v t r [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet]
EMH2801 no. a1821-4/5 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v it15909 0 4.5 4.0 1.0 1.5 0.5 2.0 2.5 3.5 3.0 it15908 it14541 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 v ds = --10v i d = --3a [mosfet] [mosfet] [mosfet] [sbd] [sbd] [sbd] [sbd] ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w a s o drain-to-source voltage, v ds -- v drain current, i d -- a 0 0 20 40 0.4 60 80 100 120 140 160 0.8 0.2 0.6 1.0 1.2 --1.0 2 3 5 7 2 3 5 7 2 3 5 5 7 2 3 --10 --0.1 --0.01 23 5 3 2 7 23 57 23 57 --0.01 --0.1 --1.0 --10 100 s 10ms 100ms operation in this area is limited by r ds (on). i d = --3a dc operation ( ta=25 c ) i dp = --20a (pw 10 s) 1ms ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit when mounted on ceramic substrate (900mm 2 0.8mm) forward voltage, v f -- v forward current, i f -- a i f -- v f reverse voltage, v r -- v i r -- v r reverse current, i r -- a 0 0.05 0.15 it12192 4 0 16 it12193 0.001 2 3 5 7 2 3 5 0.01 7 2 3 5 0.1 0.50 0.25 0.35 0.45 0.10 0.20 0.30 0.40 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 8 6 2 101214 ta=125 c 75 c 25 c 0 c --25 c ta=125 c 100 c 75 c 50 c 25 c 0 c --25 c 50 c 100 c 7 2 3 1.0 (2) (3) (1) 0 0 0.5 1.2 0.2 0.4 0.6 0.8 1.0 2.5 2.0 1.0 1.5 it12194 (4) 0 0 0.0004 0.0008 0.0012 4 2 0.0014 0.0002 0.0006 0.0010 8 61214 10 16 it12195 (1) (2) (3) (4) average output current, i o -- a p f (av) -- i o average forward power dissipation, p f (av) -- w 180 360 sine wave 360 rectangular wave (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 p r (av) -- v r average reverse voltage, v r -- v (1)rectangular wave =300 (2)rectangular wave =240 (3)rectangular wave =180 (4)sine wave =180 rectangular wave sine wave 360 v r 180 360 v r average reverse power dissipation, p r (av) -- w
EMH2801 no. a1821-5/5 ps this catalog provides information as of august, 2010. speci cations and information herein are subject to change without notice. note on usage : since the EMH2801 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. [sbd] [sbd] 0.01 23 7 0.1 0 52 2 37 1.0 5 24 20 16 12 8 4 3 it13214 0.1 1.0 10 100 10 2 3 5 2 3 5 7 23 57 23 3 57 2 it13213 f=1mhz i fsm -- t time, t -- s surge forward current, i fsm (peak) -- a i s 20ms t current waveform 50hz sine wave c -- v r reverse voltage, v r -- v interterminal capacitance, c -- pf
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